NTB45N06LT4 vs MTB30N06VLT4 feature comparison

NTB45N06LT4 onsemi

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MTB30N06VLT4 Motorola Mobility LLC

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Rohs Code No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer ON SEMICONDUCTOR MOTOROLA INC
Package Description SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Manufacturer Package Code CASE 418B-04
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95 8541.29.00.95
Additional Feature LOGIC LEVEL COMPATIBLE AVALANCHE RATED
Avalanche Energy Rating (Eas) 240 mJ 154 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 45 A 30 A
Drain-source On Resistance-Max 0.028 Ω 0.05 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 2.4 W 90 W
Pulsed Drain Current-Max (IDM) 150 A 105 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Feedback Cap-Max (Crss) 190 pF
Power Dissipation Ambient-Max 90 W
Turn-off Time-Max (toff) 330 ns
Turn-on Time-Max (ton) 550 ns

Compare NTB45N06LT4 with alternatives

Compare MTB30N06VLT4 with alternatives