NTB60N06 vs NTB60N06LT4 feature comparison

NTB60N06 onsemi

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NTB60N06LT4 onsemi

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer ON SEMICONDUCTOR ON SEMICONDUCTOR
Package Description SMALL OUTLINE, R-PSSO-G2 CASE 418B-04, D2PAK-3
Pin Count 3 3
Manufacturer Package Code CASE 418B-04 418B-04
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 454 mJ 454 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 60 A 60 A
Drain-source On Resistance-Max 0.014 Ω 0.016 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e0 e0
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 235 235
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 150 W 150 W
Pulsed Drain Current-Max (IDM) 180 A 180 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code No
Part Package Code D2PAK 2 LEAD
Samacsys Manufacturer onsemi
Additional Feature LOGIC LEVEL COMPATIBLE

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