NTB60N06T4G vs FDB86566-F085 feature comparison

NTB60N06T4G onsemi

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FDB86566-F085 onsemi

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Pbfree Code Yes Yes
Part Life Cycle Code End Of Life End Of Life
Ihs Manufacturer ONSEMI ONSEMI
Part Package Code D2PAK 2 LEAD TO-263 2L (D2PAK)
Package Description D2PAK-3 TO-263, D2PAK-3/2
Pin Count 3
Manufacturer Package Code 418B-04 418AJ
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer onsemi onsemi
Avalanche Energy Rating (Eas) 454 mJ 193 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 60 A 110 A
Drain-source On Resistance-Max 0.014 Ω 0.0027 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 245
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 150 W 176 W
Pulsed Drain Current-Max (IDM) 180 A
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
JEDEC-95 Code TO-263AB
Operating Temperature-Min -55 °C
Reference Standard AEC-Q101
Turn-off Time-Max (toff) 64 ns
Turn-on Time-Max (ton) 115 ns

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Compare FDB86566-F085 with alternatives