NTD4906NT4H vs NTD4857N-1G feature comparison

NTD4906NT4H onsemi

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NTD4857N-1G Rochester Electronics LLC

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer ONSEMI ROCHESTER ELECTRONICS LLC
Package Description DPAK-3 LEAD FREE, CASE 369D-01, IPAK-3
Pin Count 3 3
Manufacturer Package Code CASE 369AA-01 CASE 369D-01
Reach Compliance Code not_compliant unknown
ECCN Code EAR99
Factory Lead Time 4 Weeks
Avalanche Energy Rating (Eas) 48 mJ 144.5 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 25 V
Drain Current-Max (ID) 14 A 12 A
Drain-source On Resistance-Max 0.008 Ω 0.008 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSIP-T3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 NOT SPECIFIED
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 37.5 W
Pulsed Drain Current-Max (IDM) 223 A 156 A
Qualification Status Not Qualified COMMERCIAL
Surface Mount YES NO
Terminal Finish TIN TIN
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2

Compare NTD4906NT4H with alternatives

Compare NTD4857N-1G with alternatives