NTLJD2104PTAG
vs
NTLJD2104PTBG
feature comparison
| Pbfree Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
ONSEMI
|
ROCHESTER ELECTRONICS LLC
|
| Part Package Code |
WDFN6 2x2, 0.65P
|
DFN
|
| Package Description |
WDFN-6
|
2 X 2 MM, LEAD FREE, CASE 506AN-01, WDFN6, 6 PIN
|
| Pin Count |
6
|
6
|
| Manufacturer Package Code |
506AN
|
CASE 506AN-01
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| Factory Lead Time |
4 Weeks
|
|
| Samacsys Manufacturer |
onsemi
|
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
12 V
|
12 V
|
| Drain Current-Max (ID) |
2.4 A
|
2.4 A
|
| Drain-source On Resistance-Max |
0.12 Ω
|
0.12 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
S-PDSO-N6
|
S-XDSO-N6
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
NOT SPECIFIED
|
| Number of Elements |
2
|
2
|
| Number of Terminals |
6
|
6
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
UNSPECIFIED
|
| Package Shape |
SQUARE
|
SQUARE
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Power Dissipation-Max (Abs) |
2.3 W
|
|
| Qualification Status |
Not Qualified
|
COMMERCIAL
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN
|
MATTE TIN
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare NTLJD2104PTAG with alternatives
Compare NTLJD2104PTBG with alternatives