NTLJS7D2P02P8ZTAG
vs
NTLJS7D2P02P8Z
feature comparison
Pbfree Code |
Yes
|
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
ONSEMI
|
ON SEMICONDUCTOR
|
Package Description |
WDFN-6
|
SMALL OUTLINE, S-PDSO-N3
|
Manufacturer Package Code |
483AV
|
|
Reach Compliance Code |
not_compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
16 Weeks
|
|
Date Of Intro |
2019-03-05
|
2018-11-26
|
Samacsys Manufacturer |
onsemi
|
onsemi
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
20 V
|
20 V
|
Drain Current-Max (ID) |
7.9 A
|
7.9 A
|
Drain-source On Resistance-Max |
0.009 Ω
|
0.009 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
S-PDSO-N3
|
S-PDSO-N3
|
JESD-609 Code |
e3
|
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-55 °C
|
-55 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
SQUARE
|
SQUARE
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Power Dissipation-Max (Abs) |
2.4 W
|
2.4 W
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Matte Tin (Sn) - annealed
|
|
Terminal Form |
NO LEAD
|
NO LEAD
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
30
|
40
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
2
|
Rohs Code |
|
Yes
|
|
|
|