NVTFS5811NLWFTAG
vs
DMTH4007LPSQ-13
feature comparison
| Pbfree Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
ONSEMI
|
DIODES INC
|
| Part Package Code |
WDFN8 3.3x3.3, 0.65P
|
|
| Pin Count |
8
|
|
| Manufacturer Package Code |
511AB
|
|
| Reach Compliance Code |
not_compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
2 Days
|
8 Weeks
|
| Samacsys Manufacturer |
onsemi
|
Diodes Incorporated
|
| Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
| Drain Current-Max (ID) |
40 A
|
15.5 A
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
1
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
175 °C
|
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
21 W
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN
|
Matte Tin (Sn)
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
| Additional Feature |
|
HIGH RELIABILITY
|
| Avalanche Energy Rating (Eas) |
|
20 mJ
|
| Case Connection |
|
DRAIN
|
| DS Breakdown Voltage-Min |
|
40 V
|
| Drain-source On Resistance-Max |
|
0.0098 Ω
|
| JESD-30 Code |
|
R-PDSO-F5
|
| Number of Terminals |
|
5
|
| Operating Mode |
|
ENHANCEMENT MODE
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Pulsed Drain Current-Max (IDM) |
|
160 A
|
| Reference Standard |
|
AEC-Q101
|
| Terminal Form |
|
FLAT
|
| Terminal Position |
|
DUAL
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
|
|
|
Compare NVTFS5811NLWFTAG with alternatives
Compare DMTH4007LPSQ-13 with alternatives