P4SMA51AHE3_A/I
vs
SMAJ43A
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Yes
Part Life Cycle Code
Active
Active
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
HTS Code
8541.10.00.50
Factory Lead Time
8 Weeks
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
53.6 V
52.83 V
Breakdown Voltage-Min
48.5 V
47.8 V
Breakdown Voltage-Nom
51.05 V
Clamping Voltage-Max
70.1 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AC
DO-214AC
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
400 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
3.3 W
1 W
Reference Standard
AEC-Q101
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
43.6 V
43 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Matte Tin (Sn)
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
NOT SPECIFIED
Base Number Matches
1
61
Qualification Status
Not Qualified
Compare P4SMA51AHE3_A/I with alternatives
Compare SMAJ43A with alternatives