P4SMA51AHE3_A/I vs SMAJ43A feature comparison

P4SMA51AHE3_A/I Vishay Intertechnologies

Buy Now Datasheet

SMAJ43A Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Factory Lead Time 8 Weeks
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 53.6 V 52.83 V
Breakdown Voltage-Min 48.5 V 47.8 V
Breakdown Voltage-Nom 51.05 V
Clamping Voltage-Max 70.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3.3 W 1 W
Reference Standard AEC-Q101 UL RECOGNIZED
Rep Pk Reverse Voltage-Max 43.6 V 43 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Base Number Matches 1 61
Qualification Status Not Qualified

Compare P4SMA51AHE3_A/I with alternatives

Compare SMAJ43A with alternatives