P4SMA82A vs P4SMA82A_R1_10001 feature comparison

P4SMA82A Bourns Inc

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P4SMA82A_R1_10001 PanJit Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer BOURNS INC PAN JIT INTERNATIONAL INC
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Factory Lead Time 16 Weeks
Samacsys Manufacturer Bourns
Breakdown Voltage-Max 86.1 V 86.1 V
Breakdown Voltage-Min 77.9 V 77.9 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard IEC-61000-4-2, 4-4, 4-5
Rep Pk Reverse Voltage-Max 70.1 V 70.1 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Base Number Matches 6 2
Pbfree Code Yes
Package Description R-PDSO-C2

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Compare P4SMA82A_R1_10001 with alternatives