P6KE6.8_AY_00001 vs P6KE6.8B feature comparison

P6KE6.8_AY_00001 PanJit Semiconductor

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P6KE6.8B Diodes Incorporated

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer PAN JIT INTERNATIONAL INC DIODES INC
Package Description O-PALF-W2 O-LALF-W2
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE
Breakdown Voltage-Max 7.48 V
Breakdown Voltage-Min 6.12 V 6.12 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-15
JESD-30 Code O-PALF-W2 O-LALF-W2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 5.5 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 4
Clamping Voltage-Max 10.8 V
Qualification Status Not Qualified
Reverse Current-Max 1000 µA

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