P6SMB11A vs P6SMBJ11A_R2_00001 feature comparison

P6SMB11A YAGEO Corporation

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P6SMBJ11A_R2_00001 PanJit Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer YAGEO CORP PAN JIT INTERNATIONAL INC
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Date Of Intro 2018-11-05
Additional Feature EXCELLENT CLAMPING CAPABILITY, TR, 7 INCH: 500
Breakdown Voltage-Max 11.6 V 14 V
Breakdown Voltage-Min 10.5 V 12.2 V
Breakdown Voltage-Nom 11 V
Clamping Voltage-Max 15.6 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W
Reference Standard UL CERTIFIED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 9.4 V 11 V
Reverse Current-Max 5 µA
Reverse Test Voltage 9.4 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 40
Base Number Matches 31 1
Pbfree Code Yes
Package Description R-PDSO-C2

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