P6SMB160A-E3/5B vs P4SMAJ90 feature comparison

P6SMB160A-E3/5B Vishay Semiconductors

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P4SMAJ90 Dean Technology

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer VISHAY SEMICONDUCTORS DEAN TECHNOLOGY INC
Part Package Code DO-214AA
Package Description R-PDSO-C2 SMA, 2 PIN
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Samacsys Manufacturer Vishay
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 168 V 126.5 V
Breakdown Voltage-Min 152 V 100 V
Breakdown Voltage-Nom 160 V 113.25 V
Clamping Voltage-Max 219 V 160 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-214AA DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 400 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 136 V 90 V
Reverse Current-Max 1 µA 5 µA
Reverse Test Voltage 136 V 90 V
Surface Mount YES YES
Technology AVALANCHE
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 2 11

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