P6SMB8.2A
vs
SMBJP6KE8.2AHE3-TP
feature comparison
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
TELEFUNKEN MICROELECTRONICS GMBH
|
MICRO COMMERCIAL COMPONENTS CORP
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Base Number Matches |
30
|
1
|
| Package Description |
|
R-PDSO-C2
|
| Additional Feature |
|
EXCELLENT CLAMPING CAPABILITY
|
| Breakdown Voltage-Max |
|
8.61 V
|
| Breakdown Voltage-Min |
|
7.79 V
|
| Configuration |
|
SINGLE
|
| Diode Element Material |
|
SILICON
|
| Diode Type |
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JEDEC-95 Code |
|
DO-214AA
|
| JESD-30 Code |
|
R-PDSO-C2
|
| Moisture Sensitivity Level |
|
1
|
| Non-rep Peak Rev Power Dis-Max |
|
600 W
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
2
|
| Operating Temperature-Max |
|
175 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Polarity |
|
UNIDIRECTIONAL
|
| Reference Standard |
|
AEC-Q101; UL RECOGNIZED
|
| Rep Pk Reverse Voltage-Max |
|
7.02 V
|
| Surface Mount |
|
YES
|
| Technology |
|
AVALANCHE
|
| Terminal Form |
|
C BEND
|
| Terminal Position |
|
DUAL
|
|
|
|
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