P6SMB82A-M3/52 vs SMBJP6KE82AE3 feature comparison

P6SMB82A-M3/52 Vishay Intertechnologies

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SMBJP6KE82AE3 Microsemi Corporation

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Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC MICROSEMI CORP
Package Description SMB, 2 PIN R-PDSO-C2
Reach Compliance Code unknown compliant
Factory Lead Time 8 Weeks
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 86.1 V 86.1 V
Breakdown Voltage-Min 77.9 V 77.9 V
Breakdown Voltage-Nom 82 V
Clamping Voltage-Max 113 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 1.38 W
Rep Pk Reverse Voltage-Max 70.1 V 70.1 V
Reverse Current-Max 1 µA
Reverse Test Voltage 70.1 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 2 1
ECCN Code EAR99
HTS Code 8541.10.00.50

Compare P6SMB82A-M3/52 with alternatives

Compare SMBJP6KE82AE3 with alternatives