P6SMBJ7.0A vs SMBJP6KE8.2AE3 feature comparison

P6SMBJ7.0A Hitano Enterprise Corp

Buy Now Datasheet

SMBJP6KE8.2AE3 Microsemi Corporation

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer HITANO ENTERPRISE CORP MICROSEMI CORP
Package Description SMB, 2 PIN R-PDSO-C2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 8.6 V 8.61 V
Breakdown Voltage-Min 7.78 V 7.79 V
Breakdown Voltage-Nom 8.19 V
Clamping Voltage-Max 12 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 1.38 W
Reference Standard IEC-1000-4-2, 4-4
Rep Pk Reverse Voltage-Max 7 V 7.02 V
Reverse Current-Max 5 µA
Reverse Test Voltage 7 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 9 1

Compare P6SMBJ7.0A with alternatives

Compare SMBJP6KE8.2AE3 with alternatives