PBLS6001D vs PBLS6001D,115 feature comparison

PBLS6001D Nexperia

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PBLS6001D,115 NXP Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer NEXPERIA NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-G6 PLASTIC, SC-74, 6 PIN
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Date Of Intro 2017-02-01
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 30 30
JESD-30 Code R-PDSO-G6 R-PDSO-G6
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 2 2
Number of Terminals 6 6
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type NPN AND PNP NPN AND PNP
Surface Mount YES YES
Terminal Finish TIN TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 185 MHz 185 MHz
Base Number Matches 3 2
Part Package Code TSOP
Pin Count 6
Manufacturer Package Code SOT457
Factory Lead Time 4 Weeks
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 0.6 W
Qualification Status Not Qualified

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Compare PBLS6001D,115 with alternatives