PESD3V3L4UF,115 vs PESD3V3L4UF feature comparison

PESD3V3L4UF,115 Nexperia

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PESD3V3L4UF NXP Semiconductors

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer NEXPERIA NXP SEMICONDUCTORS
Part Package Code SON SON
Pin Count 6 252
Manufacturer Package Code SOT886
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Factory Lead Time 6 Weeks
Date Of Intro 2017-02-01
Samacsys Manufacturer Nexperia
Breakdown Voltage-Max 5.88 V 5.88 V
Breakdown Voltage-Min 5.32 V 5.32 V
Configuration COMMON ANODE, 4 ELEMENTS COMMON ANODE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code MO-252 MO-252
JESD-30 Code R-PBCC-N6 R-PBCC-N6
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 30 W 30 W
Number of Elements 4 4
Number of Terminals 6 6
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style CHIP CARRIER CHIP CARRIER
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard IEC-60134; IEC-61000-4-2, 4-5 AEC-Q101
Rep Pk Reverse Voltage-Max 3.3 V 3.3 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN Tin (Sn)
Terminal Form NO LEAD NO LEAD
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 1 4
Pbfree Code Yes
Package Description 1 X 1.45 MM, 0.50 MM HEIGHT, ULTRA SMALL, PLASTIC, MO-252, SMD, 6 PIN
Additional Feature LOW CAPACITANCE
Breakdown Voltage-Nom 5.6 V
Clamping Voltage-Max 12 V
Operating Temperature-Min -65 °C
Qualification Status Not Qualified
Reverse Current-Max 0.3 µA
Reverse Test Voltage 3.3 V

Compare PESD3V3L4UF,115 with alternatives

Compare PESD3V3L4UF with alternatives