RN1708(TE85R) vs EMG8 feature comparison

RN1708(TE85R) Toshiba America Electronic Components

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EMG8 Jiangsu Changjiang Electronics Technology Co Ltd

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Part Life Cycle Code Obsolete Contact Manufacturer
Ihs Manufacturer TOSHIBA CORP JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO LTD
Package Description SMALL OUTLINE, R-PDSO-G5 SMALL OUTLINE, R-PDSO-F5
Pin Count 5
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 0.468 BUILT IN BIAS RESISTANCE RATIO IS 10
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 80 80
JESD-30 Code R-PDSO-G5 R-PDSO-F5
Number of Elements 2 2
Number of Terminals 5 5
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Form GULL WING FLAT
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz 250 MHz
Base Number Matches 1 2
Operating Temperature-Max 150 °C

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