S1A vs S1A-GT3 feature comparison

S1A Hutson Industries

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S1A-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer HUTSON INDUSTRIES SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.30.00.80
Additional Feature SENSITIVE GATE LOW POWER LOSS
Configuration SINGLE SINGLE
Critical Rate of Rise of Off-State Voltage-Min 5 V/us
DC Gate Trigger Current-Max 0.2 mA
DC Gate Trigger Voltage-Max 0.8 V
Holding Current-Max 5 mA
JEDEC-95 Code TO-92 DO-214AC
JESD-30 Code O-PBCY-W3 R-PDSO-C2
JESD-609 Code e0
Leakage Current-Max 0.1 mA
Non-Repetitive Pk On-state Cur 20 A
Number of Elements 1 1
Number of Terminals 3 2
On-state Current-Max 1200 A
Operating Temperature-Max 110 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style CYLINDRICAL SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
RMS On-state Current-Max 1.2 A
Repetitive Peak Off-state Leakage Current-Max 100 µA
Repetitive Peak Off-state Voltage 100 V
Repetitive Peak Reverse Voltage 100 V
Surface Mount NO YES
Terminal Finish TIN LEAD
Terminal Form WIRE C BEND
Terminal Position BOTTOM DUAL
Trigger Device Type SCR
Base Number Matches 49 2
Package Description R-PDSO-C2
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Moisture Sensitivity Level 1
Number of Phases 1
Output Current-Max 1 A
Rep Pk Reverse Voltage-Max 50 V
Reverse Recovery Time-Max 2.5 µs

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