SI4214DDY-T1-E3 vs ZXMN3G32DN8TA feature comparison

SI4214DDY-T1-E3 Vishay Intertechnologies

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ZXMN3G32DN8TA Diodes Incorporated

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC DIODES INC
Package Description SOP-8 SOP-8
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 16 Weeks 8 Weeks
Samacsys Manufacturer Vishay Diodes Incorporated
Avalanche Energy Rating (Eas) 5 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 8.5 A 5.5 A
Drain-source On Resistance-Max 0.0195 Ω 0.028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 86 pF
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8 R-PDSO-G8
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 2 2
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 3.1 W 2.1 W
Pulsed Drain Current-Max (IDM) 30 A
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 108 ns
Turn-on Time-Max (ton) 59 ns
Base Number Matches 1 1
Pbfree Code Yes
Part Package Code SOT
Pin Count 8
Qualification Status Not Qualified

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Compare ZXMN3G32DN8TA with alternatives