SI5457DC-T1-GE3
vs
IRF7404PBF-1
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
INFINEON TECHNOLOGIES AG
|
| Package Description |
HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, 1206-8, CHIPFET-8
|
,
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
16 Weeks
|
|
| Samacsys Manufacturer |
Vishay
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
20 V
|
20 V
|
| Drain Current-Max (ID) |
6 A
|
6.7 A
|
| Drain-source On Resistance-Max |
0.036 Ω
|
0.04 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
195 pF
|
340 pF
|
| JESD-30 Code |
R-PDSO-C8
|
R-PDSO-G8
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
1
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
8
|
8
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Power Dissipation-Max (Abs) |
5.7 W
|
2.5 W
|
| Pulsed Drain Current-Max (IDM) |
20 A
|
27 A
|
| Reference Standard |
IEC-61249-2-21
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
MATTE TIN
|
Matte Tin (Sn)
|
| Terminal Form |
C BEND
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Max (toff) |
85 ns
|
|
| Turn-on Time-Max (ton) |
90 ns
|
|
| Base Number Matches |
1
|
1
|
| Power Dissipation Ambient-Max |
|
2.5 W
|
|
|
|
Compare SI5457DC-T1-GE3 with alternatives
Compare IRF7404PBF-1 with alternatives