SI5457DC-T1-GE3 vs IRF7404TRPBF feature comparison

SI5457DC-T1-GE3 Vishay Intertechnologies

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IRF7404TRPBF Infineon Technologies AG

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Rohs Code Yes Yes
Part Life Cycle Code Active End Of Life
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC INFINEON TECHNOLOGIES AG
Package Description HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, 1206-8, CHIPFET-8 SO-8
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 16 Weeks 16 Weeks, 3 Days
Samacsys Manufacturer Vishay Infineon
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V 20 V
Drain Current-Max (ID) 6 A 6.7 A
Drain-source On Resistance-Max 0.036 Ω 0.04 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 195 pF 340 pF
JESD-30 Code R-PDSO-C8 R-PDSO-G8
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 5.7 W 2.5 W
Pulsed Drain Current-Max (IDM) 20 A 27 A
Reference Standard IEC-61249-2-21
Surface Mount YES YES
Terminal Finish MATTE TIN Matte Tin (Sn)
Terminal Form C BEND GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 85 ns 165 ns
Turn-on Time-Max (ton) 90 ns 36 ns
Base Number Matches 1 2
HTS Code 8541.29.00.95
Additional Feature LOGIC LEVEL COMPATIBLE
JEDEC-95 Code MS-012AA
Power Dissipation Ambient-Max 2.5 W
Qualification Status Not Qualified

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