SIHG14N50D-GE3
vs
IRF450SMD-JQR-B
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
SEMELAB LTD
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
12 Weeks
|
|
| Samacsys Manufacturer |
Vishay
|
|
| Avalanche Energy Rating (Eas) |
56 mJ
|
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
500 V
|
500 V
|
| Drain Current-Max (ID) |
14 A
|
13 A
|
| Drain-source On Resistance-Max |
0.4 Ω
|
0.4 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-247AC
|
TO-204AA
|
| JESD-30 Code |
R-PSFM-T3
|
O-MBFM-P2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
2
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
METAL
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
38 A
|
52 A
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
PIN/PEG
|
| Terminal Position |
SINGLE
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Pbfree Code |
|
No
|
| Part Package Code |
|
TO-3
|
| Package Description |
|
FLANGE MOUNT, O-MBFM-P2
|
| Pin Count |
|
2
|
| Operating Temperature-Max |
|
150 °C
|
| Qualification Status |
|
Not Qualified
|
|
|
|
Compare SIHG14N50D-GE3 with alternatives
Compare IRF450SMD-JQR-B with alternatives