SIHG73N60E-E3
vs
APT77N60SC6
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Transferred
|
Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
MICROSEMI CORP
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
22 Weeks
|
|
Samacsys Manufacturer |
Vishay
|
Microsemi Corporation
|
Avalanche Energy Rating (Eas) |
2030 mJ
|
1954 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
600 V
|
600 V
|
Drain Current-Max (ID) |
73 A
|
77 A
|
Drain-source On Resistance-Max |
0.039 Ω
|
0.041 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-247AC
|
|
JESD-30 Code |
R-PSFM-T3
|
R-PSSO-G2
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
520 W
|
481 W
|
Pulsed Drain Current-Max (IDM) |
236 A
|
272 A
|
Surface Mount |
NO
|
YES
|
Terminal Form |
THROUGH-HOLE
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Package Description |
|
D3PAK-3
|
Pin Count |
|
3
|
Additional Feature |
|
AVALANCHE RATED, ULTRA-LOW RESISTANCE
|
JESD-609 Code |
|
e3
|
Qualification Status |
|
Not Qualified
|
Terminal Finish |
|
TIN
|
|
|
|
Compare SIHG73N60E-E3 with alternatives
Compare APT77N60SC6 with alternatives