SM6T200CAHE3/5B vs SM6T200CAHM3_A/H feature comparison

SM6T200CAHE3/5B Vishay Semiconductors

Buy Now Datasheet

SM6T200CAHM3_A/H Vishay Intertechnologies

Buy Now Datasheet
Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer VISHAY SEMICONDUCTORS VISHAY INTERTECHNOLOGY INC
Part Package Code DO-214AA
Package Description R-PDSO-C2
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 210 V 210 V
Breakdown Voltage-Min 190 V 190 V
Breakdown Voltage-Nom 200 V 200 V
Case Connection CATHODE
Clamping Voltage-Max 353 V 353 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 171 V 171 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 40 30
Base Number Matches 1 1
Date Of Intro 2019-02-07
Reference Standard AEC-Q101
Reverse Current-Max 1 µA
Reverse Test Voltage 171 V

Compare SM6T200CAHE3/5B with alternatives

Compare SM6T200CAHM3_A/H with alternatives