SMBG7.0A vs MXSMBJ7.0A feature comparison

SMBG7.0A International Semiconductor Inc

Buy Now Datasheet

MXSMBJ7.0A Microchip Technology Inc

Buy Now Datasheet
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INTERNATIONAL SEMICONDUCTOR INC MICROCHIP TECHNOLOGY INC
Reach Compliance Code unknown compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 8.6 V 8.6 V
Breakdown Voltage-Min 7.78 V 7.78 V
Breakdown Voltage-Nom 8.19 V
Clamping Voltage-Max 12 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-G2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -40 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1.38 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 7 V 7 V
Reverse Current-Max 200 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form GULL WING C BEND
Terminal Position DUAL DUAL
Base Number Matches 6 2
Rohs Code No
Package Description SMBJ, 2 PIN
JEDEC-95 Code DO-214AA
JESD-609 Code e0
Moisture Sensitivity Level 1
Reference Standard IEC-61000-4-2, 4-4, 4-5; MIL-19500
Terminal Finish Tin/Lead (Sn/Pb)

Compare MXSMBJ7.0A with alternatives