SMBJ51
vs
SMBJ51ATR
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
LITE-ON SEMICONDUCTOR CORP
SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description
R-PDSO-C2
Pin Count
2
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
62.7 V
62.7 V
Breakdown Voltage-Min
56.7 V
56.7 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
255
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1.5 W
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
51 V
51 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Base Number Matches
46
2
Date Of Intro
2018-08-03
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Nom
59.7 V
Clamping Voltage-Max
82.4 V
JEDEC-95 Code
DO-214AA
Reference Standard
MIL-STD-750
Reverse Current-Max
5 µA
Reverse Test Voltage
51 V
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