SMBJ51 vs SMBJ51E3/TR7 feature comparison

SMBJ51 Goodwork Semiconductor Co Ltd

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SMBJ51E3/TR7 Microsemi Corporation

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Part Life Cycle Code Contact Manufacturer Transferred
Ihs Manufacturer GOODWORK SEMICONDUCTOR CO LTD MICROSEMI CORP
Package Description R-PDSO-C2 R-PDSO-J2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 71.8 V 69.3 V
Breakdown Voltage-Min 56.7 V 56.7 V
Breakdown Voltage-Nom 64.25 V
Clamping Voltage-Max 91.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-J2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 51 V 51 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND J BEND
Terminal Position DUAL DUAL
Base Number Matches 46 1
Pbfree Code Yes
Rohs Code Yes
Part Package Code DO-214AA
Pin Count 2
JESD-609 Code e3
Moisture Sensitivity Level 1
Power Dissipation-Max 1.38 W
Terminal Finish MATTE TIN

Compare SMBJ51 with alternatives

Compare SMBJ51E3/TR7 with alternatives