SMBJ51A-Q vs SMBJ51R5 feature comparison

SMBJ51A-Q Bourns Inc

Buy Now Datasheet

SMBJ51R5 Taiwan Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer BOURNS INC TAIWAN SEMICONDUCTOR CO LTD
Package Description R-PDSO-C2 SMB, 2 PIN
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Factory Lead Time 16 Weeks
Samacsys Manufacturer Bourns
Additional Feature PRSM-MIN EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 62.7 V 69.3 V
Breakdown Voltage-Min 56.7 V 56.7 V
Breakdown Voltage-Nom 59.7 V
Clamping Voltage-Max 82.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 51 V 51 V
Reverse Current-Max 1 µA
Reverse Test Voltage 51 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 2 2
Power Dissipation-Max 3 W

Compare SMBJ51A-Q with alternatives

Compare SMBJ51R5 with alternatives