SMBJ9.0A vs SMBJ9.0AE3 feature comparison

SMBJ9.0A General Instrument Corp

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SMBJ9.0AE3 Microsemi Corporation

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer GENERAL INSTRUMENT CORP MICROSEMI CORP
Reach Compliance Code unknown compliant
Breakdown Voltage-Max 11.5 V 11.1 V
Breakdown Voltage-Min 10 V 10 V
Clamping Voltage-Max 15.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 10 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 2 50
Pbfree Code Yes
Rohs Code Yes
Part Package Code DO-214AA
Package Description R-PDSO-C2
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Date Of Intro 1995-01-01
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 1.38 W
Rep Pk Reverse Voltage-Max 9 V
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 10

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Compare SMBJ9.0AE3 with alternatives