SMBJ9.0AE3 vs SMBJ9.0A-M3/5B feature comparison

SMBJ9.0AE3 Microsemi Corporation

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SMBJ9.0A-M3/5B Vishay Semiconductors

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer MICROSEMI CORP VISHAY SEMICONDUCTORS
Part Package Code DO-214AA DO-214AA
Package Description R-PDSO-C2 R-PDSO-C2
Pin Count 2 2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Date Of Intro 1995-01-01
Breakdown Voltage-Max 11.1 V 11.1 V
Breakdown Voltage-Min 10 V 10 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.38 W 5 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 9 V 9 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 10 30
Base Number Matches 1 2
Additional Feature EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
Breakdown Voltage-Nom 10.55 V
Clamping Voltage-Max 15.4 V
Forward Voltage-Max (VF) 3.5 V
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Reference Standard UL RECOGNIZED
Reverse Current-Max 10 µA
Reverse Test Voltage 9 V

Compare SMBJ9.0AE3 with alternatives

Compare SMBJ9.0A-M3/5B with alternatives