SMBJ9.0HE3/52 vs SMBJ9.0A-M3/52 feature comparison

SMBJ9.0HE3/52 Vishay Intertechnologies

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SMBJ9.0A-M3/52 Vishay Semiconductors

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC VISHAY SEMICONDUCTORS
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
Breakdown Voltage-Nom 11.1 V 10.55 V
Clamping Voltage-Max 16.9 V 15.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard UL RECOGNIZED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 9 V 9 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 2 2
Pbfree Code Yes
Part Package Code DO-214AA
Package Description R-PDSO-C2
Pin Count 2
Samacsys Manufacturer Vishay
Breakdown Voltage-Max 11.1 V
Breakdown Voltage-Min 10 V
Forward Voltage-Max (VF) 3.5 V
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 5 W
Reverse Current-Max 10 µA
Reverse Test Voltage 9 V
Terminal Finish Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) 30

Compare SMBJ9.0HE3/52 with alternatives

Compare SMBJ9.0A-M3/52 with alternatives