SPA11N60CFDXK vs STB11NM60N-1 feature comparison

SPA11N60CFDXK Infineon Technologies AG

Buy Now Datasheet

STB11NM60N-1 STMicroelectronics

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG STMICROELECTRONICS
Package Description FLANGE MOUNT, R-PSFM-T3 ROHS COMPLIANT, TO-262, I2PAK-3
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 15 Weeks
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 340 mJ 200 mJ
Case Connection ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 600 V
Drain Current-Max (ID) 11 A 10 A
Drain-source On Resistance-Max 0.44 Ω 0.45 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-262AA
JESD-30 Code R-PSFM-T3 R-PSIP-T3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 28 A 40 A
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Part Package Code TO-262AA
Pin Count 3
JESD-609 Code e3
Power Dissipation-Max (Abs) 90 W
Qualification Status Not Qualified
Terminal Finish Matte Tin (Sn)
Transistor Application SWITCHING

Compare SPA11N60CFDXK with alternatives

Compare STB11NM60N-1 with alternatives