SPW11N80C3 vs PHD3055L feature comparison

SPW11N80C3 Infineon Technologies AG

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PHD3055L Philips Semiconductors

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Not Recommended Transferred
Ihs Manufacturer INFINEON TECHNOLOGIES AG PHILIPS SEMICONDUCTORS
Part Package Code TO-247
Package Description FLANGE MOUNT, R-PSFM-T3 ,
Pin Count 3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 470 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 11 A 12 A
Drain-source On Resistance-Max 0.45 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3 e0
Number of Elements 1 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 156 W 50 W
Pulsed Drain Current-Max (IDM) 33 A
Qualification Status Not Qualified
Surface Mount NO YES
Terminal Finish Tin (Sn) Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Base Number Matches 1 2

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