STD10P6F6 vs SFW9Z24 feature comparison

STD10P6F6 STMicroelectronics

Buy Now Datasheet

SFW9Z24 Samsung Semiconductor

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer STMICROELECTRONICS SAMSUNG SEMICONDUCTOR INC
Package Description DPAK-3/2 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Factory Lead Time 16 Weeks, 3 Days
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 80 mJ 161 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 10 A 9.7 A
Drain-source On Resistance-Max 0.116 Ω 0.28 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 35 W 49 W
Pulsed Drain Current-Max (IDM) 40 A 40 A
Surface Mount NO YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Qualification Status Not Qualified

Compare STD10P6F6 with alternatives

Compare SFW9Z24 with alternatives