STL11N3LLH6
vs
SIR462DP-T1-GE3
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
STMICROELECTRONICS
|
VISHAY INTERTECHNOLOGY INC
|
| Package Description |
3.30 X 3.30 MM, ROHS COMPLIANT, POWERFLAT-8
|
ROHS COMPLIANT, POWERPAK, SOP-8
|
| Pin Count |
8
|
|
| Reach Compliance Code |
not_compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
26 Weeks
|
|
| Samacsys Manufacturer |
STMicroelectronics
|
Vishay
|
| Additional Feature |
ULTRA-LOW RESISTANCE
|
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
30 V
|
30 V
|
| Drain Current-Max (ID) |
11 A
|
18.9 A
|
| Drain-source On Resistance-Max |
0.0095 Ω
|
0.0079 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
S-PDSO-N8
|
R-XDSO-C5
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
8
|
5
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
UNSPECIFIED
|
| Package Shape |
SQUARE
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
50 W
|
41.7 W
|
| Pulsed Drain Current-Max (IDM) |
44 A
|
70 A
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
NO LEAD
|
C BEND
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
40
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Avalanche Energy Rating (Eas) |
|
48 mJ
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Qualification Status |
|
Not Qualified
|
| Terminal Finish |
|
Matte Tin (Sn)
|
|
|
|
Compare STL11N3LLH6 with alternatives
Compare SIR462DP-T1-GE3 with alternatives