SUP60030E-GE3 vs SUM60030E-GE3 feature comparison

SUP60030E-GE3 Vishay Intertechnologies

Buy Now Datasheet

SUM60030E-GE3 Vishay Intertechnologies

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC VISHAY INTERTECHNOLOGY INC
Package Description FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 38 Weeks 38 Weeks
Samacsys Manufacturer Vishay Vishay
Avalanche Energy Rating (Eas) 245 mJ 245 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V 80 V
Drain Current-Max (ID) 120 A 120 A
Drain-source On Resistance-Max 0.0034 Ω 0.0032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-263AB
JESD-30 Code R-PSFM-T3 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 250 A 250 A
Surface Mount NO YES
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
JESD-609 Code e3
Moisture Sensitivity Level 1
Terminal Finish MATTE TIN

Compare SUP60030E-GE3 with alternatives

Compare SUM60030E-GE3 with alternatives