TESDU12V vs TESDU12VRZ feature comparison

TESDU12V Taiwan Semiconductor

Buy Now Datasheet

TESDU12VRZ Taiwan Semiconductor

Buy Now Datasheet
Part Life Cycle Code Active Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Samacsys Manufacturer Taiwan Semiconductor
Breakdown Voltage-Min 14 V 13 V
Breakdown Voltage-Nom 17 V
Clamping Voltage-Max 40 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-R2 R-PBCC-N2
JESD-609 Code e4 e4
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 85 °C 150 °C
Operating Temperature-Min -40 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE CHIP CARRIER
Polarity UNIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 0.1 W
Reference Standard IEC-61000-4-2
Rep Pk Reverse Voltage-Max 12 V 12 V
Reverse Current-Max 1 µA
Reverse Test Voltage 12 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Gold (Au) GOLD
Terminal Form WRAP AROUND NO LEAD
Terminal Position DUAL BOTTOM
Base Number Matches 4 2
Rohs Code Yes
Package Description R-PBCC-N2
Non-rep Peak Rev Power Dis-Max 25 W

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