TK60S10N1L,LXHQ
vs
TK60F10N1L
feature comparison
| Part Life Cycle Code |
Active
|
Not Recommended
|
| Ihs Manufacturer |
TOSHIBA CORP
|
TOSHIBA CORP
|
| Package Description |
DPAK-3/2
|
,
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Toshiba
|
|
| Avalanche Energy Rating (Eas) |
187 mJ
|
187 mJ
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
100 V
|
100 V
|
| Drain Current-Max (ID) |
60 A
|
60 A
|
| Drain-source On Resistance-Max |
0.00925 Ω
|
0.00925 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
220 pF
|
220 pF
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
180 W
|
205 W
|
| Pulsed Drain Current-Max (IDM) |
180 A
|
180 A
|
| Reference Standard |
AEC-Q101
|
AEC-Q101
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
2
|
|
|
|
Compare TK60S10N1L,LXHQ with alternatives
Compare TK60F10N1L with alternatives