UGB10DCTHE3/45
vs
VT10200C-E3/4W
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
VISHAY SEMICONDUCTORS
|
VISHAY SEMICONDUCTORS
|
| Part Package Code |
D2PAK
|
TO-220AB
|
| Package Description |
R-PSSO-G2
|
R-PSFM-T3
|
| Pin Count |
3
|
3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Samacsys Manufacturer |
Vishay
|
Vishay
|
| Additional Feature |
FREE WHEELING DIODE, HIGH RELIABILITY
|
FREE WHEELING DIODE, LOW POWER LOSS
|
| Application |
EFFICIENCY
|
EFFICIENCY
|
| Case Connection |
CATHODE
|
CATHODE
|
| Configuration |
COMMON CATHODE, 2 ELEMENTS
|
COMMON CATHODE, 2 ELEMENTS
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.895 V
|
0.73 V
|
| JEDEC-95 Code |
TO-263AB
|
TO-220AB
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSFM-T3
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Non-rep Pk Forward Current-Max |
55 A
|
80 A
|
| Number of Elements |
2
|
2
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-40 °C
|
-40 °C
|
| Output Current-Max |
5 A
|
5 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
245
|
NOT SPECIFIED
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
200 V
|
200 V
|
| Reverse Recovery Time-Max |
0.025 µs
|
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
Tin (Sn) - with Nickel (Ni) barrier
|
|
| Terminal Form |
GULL WING
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
NOT SPECIFIED
|
| Base Number Matches |
1
|
1
|
| Technology |
|
SCHOTTKY
|
|
|
|
Compare UGB10DCTHE3/45 with alternatives
Compare VT10200C-E3/4W with alternatives