UM4301AE3
vs
UM4301EE3
feature comparison
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
MICROSEMI CORP
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Additional Feature |
LOW DISTORTION
|
LOW DISTORTION
|
| Application |
ATTENUATOR
|
ATTENUATOR
|
| Breakdown Voltage-Min |
100 V
|
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Capacitance-Max |
2.2 pF
|
2.2 pF
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Forward Resistance-Max |
1.5 Ω
|
1.5 Ω
|
| Diode Type |
PIN DIODE
|
PIN DIODE
|
| Frequency Band |
HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
|
HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
|
| JESD-30 Code |
O-XEMW-N2
|
O-XAMW-F2
|
| Minority Carrier Lifetime-Nom |
6 µs
|
6 µs
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
MICROWAVE
|
MICROWAVE
|
| Power Dissipation-Max |
20 W
|
2.5 W
|
| Surface Mount |
YES
|
YES
|
| Technology |
POSITIVE-INTRINSIC-NEGATIVE
|
POSITIVE-INTRINSIC-NEGATIVE
|
| Terminal Form |
NO LEAD
|
FLAT
|
| Terminal Position |
END
|
AXIAL
|
| Base Number Matches |
2
|
2
|
|
|
|
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