UM4301B
vs
UM4301EE3
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
MICROSEMI CORP
|
MICROSEMI CORP
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Additional Feature |
LOW DISTORTION
|
LOW DISTORTION
|
| Application |
ATTENUATOR
|
ATTENUATOR
|
| Breakdown Voltage-Min |
100 V
|
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Capacitance-Max |
2.2 pF
|
2.2 pF
|
| Diode Capacitance-Nom |
2.2 pF
|
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Forward Resistance-Max |
1.5 Ω
|
1.5 Ω
|
| Diode Res Test Current |
100 mA
|
|
| Diode Res Test Frequency |
150 MHz
|
|
| Diode Type |
PIN DIODE
|
PIN DIODE
|
| Frequency Band |
HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
|
HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
|
| JESD-30 Code |
O-XALF-W2
|
O-XAMW-F2
|
| JESD-609 Code |
e0
|
|
| Minority Carrier Lifetime-Nom |
6 µs
|
6 µs
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
MICROWAVE
|
| Power Dissipation-Max |
2.5 W
|
2.5 W
|
| Qualification Status |
Not Qualified
|
|
| Reverse Test Voltage |
100 V
|
|
| Surface Mount |
NO
|
YES
|
| Technology |
POSITIVE-INTRINSIC-NEGATIVE
|
POSITIVE-INTRINSIC-NEGATIVE
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
WIRE
|
FLAT
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
2
|
2
|
|
|
|