Datasheets
1N4006T-G by: Comchip Technology Corporation Ltd

DIODE GEN PURP 800V 1A DO41

Part Details for 1N4006T-G by Comchip Technology Corporation Ltd

Overview of 1N4006T-G by Comchip Technology Corporation Ltd

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Applications Space Technology Aerospace and Defense Energy and Power Systems

Price & Stock for 1N4006T-G

Part # Distributor Description Stock Price Buy
DISTI # 1N4006T-G-ND
DigiKey DIODE GEN PURP 800V 1A DO41 Min Qty: 5000 Lead time: 10 Weeks Container: Tape & Reel (TR) Temporarily Out of Stock
  • 5,000 $0.0329
  • 10,000 $0.0272
  • 25,000 $0.0268
  • 50,000 $0.0240
  • 125,000 $0.0208
$0.0208 / $0.0329 Buy Now
DISTI # 750-1N4006T-G
Mouser Electronics Rectifiers DIODE GEN PURP 800V 1A DO41 RoHS: Compliant 0
  • 1 $0.2100
  • 10 $0.1450
  • 100 $0.0710
  • 1,000 $0.0410
  • 5,000 $0.0320
  • 10,000 $0.0270
  • 25,000 $0.0260
  • 50,000 $0.0240
  • 100,000 $0.0200
$0.0200 / $0.2100 Order Now
NAC DIODE GEN PURP 800V 1A DO41 RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 0
  • 1 $0.0555
  • 25,000 $0.0254
  • 45,000 $0.0224
$0.0224 / $0.0555 Buy Now

Part Details for 1N4006T-G

1N4006T-G CAD Models

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1N4006T-G Part Data Attributes

1N4006T-G Comchip Technology Corporation Ltd
Buy Now Datasheet
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1N4006T-G Comchip Technology Corporation Ltd DIODE GEN PURP 800V 1A DO41
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer COMCHIP TECHNOLOGY CO LTD
Package Description O-PALF-W2
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.10.00.80
Samacsys Manufacturer Comchip Technology
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
JEDEC-95 Code DO-41
JESD-30 Code O-PALF-W2
Non-rep Pk Forward Current-Max 30 A
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Output Current-Max 1 A
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Rep Pk Reverse Voltage-Max 800 V
Surface Mount NO
Terminal Form WIRE
Terminal Position AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Alternate Parts for 1N4006T-G

This table gives cross-reference parts and alternative options found for 1N4006T-G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1N4006T-G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
UF4006_NL Rectifier Diode, Schottky, 1 Element, 1A, 800V V(RRM), Silicon, LEAD FREE, DO-41 Fairchild Semiconductor Corporation 1N4006T-G vs UF4006_NL
1T6GB0G Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, Taiwan Semiconductor 1N4006T-G vs 1T6GB0G
1N4006SP1 Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon Taiwan Semiconductor 1N4006T-G vs 1N4006SP1
1H6G-AP Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, R-1, 2 PIN Micro Commercial Components 1N4006T-G vs 1H6G-AP
10E8TR Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41 Nihon Inter Electronics Corporation 1N4006T-G vs 10E8TR
1N4006SGA1G Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon Taiwan Semiconductor 1N4006T-G vs 1N4006SGA1G
1H7-I Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon Rectron Semiconductor 1N4006T-G vs 1H7-I
SV4248US Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-1, 2 PIN Sensitron Semiconductors 1N4006T-G vs SV4248US
10D8TA2B2 Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41 Nihon Inter Electronics Corporation 1N4006T-G vs 10D8TA2B2
FR106SGP1 Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon Taiwan Semiconductor 1N4006T-G vs FR106SGP1

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