Part Details for 1N5407GHA0G by Taiwan Semiconductor
Overview of 1N5407GHA0G by Taiwan Semiconductor
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for 1N5407GHA0G
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
1N5407GHA0G-ND
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DigiKey | DIODE GEN PURP 800V 3A DO201AD Lead time: 12 Weeks Container: Tape & Box (TB) | Limited Supply - Call |
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Buy Now | |
DISTI #
1N5407GHA0G
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Avnet Americas | 3A, 800V, Standard Recovery Rectifier - Tape and Reel (Alt: 1N5407GHA0G) RoHS: Compliant Min Qty: 3000 Package Multiple: 500 Container: Reel | 0 |
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$0.0850 / $0.0927 | Buy Now |
DISTI #
821-1N5407GHA0G
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Mouser Electronics | Rectifiers 3A, 800V, Standard Recovery Rectifier RoHS: Compliant | 0 |
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$0.0810 / $0.3700 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 500 | 0 |
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$0.0991 | Buy Now |
Part Details for 1N5407GHA0G
1N5407GHA0G CAD Models
1N5407GHA0G Part Data Attributes:
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1N5407GHA0G
Taiwan Semiconductor
Buy Now
Datasheet
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Compare Parts:
1N5407GHA0G
Taiwan Semiconductor
Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TAIWAN SEMICONDUCTOR CO LTD | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.80 | |
Samacsys Manufacturer | Taiwan Semiconductor | |
Additional Feature | HIGH RELIABILITY, LOW POWER LOSS | |
Application | EFFICIENCY | |
Case Connection | ISOLATED | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | RECTIFIER DIODE | |
Forward Voltage-Max (VF) | 1 V | |
JEDEC-95 Code | DO-201AD | |
JESD-30 Code | O-PALF-W2 | |
JESD-609 Code | e3 | |
Non-rep Pk Forward Current-Max | 125 A | |
Number of Elements | 1 | |
Number of Phases | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Output Current-Max | 3 A | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | ROUND | |
Package Style | LONG FORM | |
Peak Reflow Temperature (Cel) | 260 | |
Reference Standard | AEC-Q101 | |
Rep Pk Reverse Voltage-Max | 800 V | |
Reverse Current-Max | 5 µA | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | WIRE | |
Terminal Position | AXIAL | |
Time@Peak Reflow Temperature-Max (s) | 10 |
Alternate Parts for 1N5407GHA0G
This table gives cross-reference parts and alternative options found for 1N5407GHA0G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1N5407GHA0G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
1N5407GR0 | Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, | Taiwan Semiconductor | 1N5407GHA0G vs 1N5407GR0 |
1N5407GA0G | Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, | Taiwan Semiconductor | 1N5407GHA0G vs 1N5407GA0G |
1N5407GB0 | Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, | Taiwan Semiconductor | 1N5407GHA0G vs 1N5407GB0 |
1N5407GR0G | Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, | Taiwan Semiconductor | 1N5407GHA0G vs 1N5407GR0G |
1N5407GHR0 | Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, | Taiwan Semiconductor | 1N5407GHA0G vs 1N5407GHR0 |
1N5407GHA0 | Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, | Taiwan Semiconductor | 1N5407GHA0G vs 1N5407GHA0 |
1N5407G-KB0G | Rectifier Diode, | Taiwan Semiconductor | 1N5407GHA0G vs 1N5407G-KB0G |
1N5407GHB0G | Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, | Taiwan Semiconductor | 1N5407GHA0G vs 1N5407GHB0G |
1N5407G-KR0G | Rectifier Diode, | Taiwan Semiconductor | 1N5407GHA0G vs 1N5407G-KR0G |
1N5407GX0G | Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, | Taiwan Semiconductor | 1N5407GHA0G vs 1N5407GX0G |