Datasheets
1N5407GHA0G by: Taiwan Semiconductor

Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD,

Part Details for 1N5407GHA0G by Taiwan Semiconductor

Overview of 1N5407GHA0G by Taiwan Semiconductor

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Price & Stock for 1N5407GHA0G

Part # Distributor Description Stock Price Buy
DISTI # 1N5407GHA0G-ND
DigiKey DIODE GEN PURP 800V 3A DO201AD Lead time: 12 Weeks Container: Tape & Box (TB) Limited Supply - Call
Buy Now
DISTI # 1N5407GHA0G
Avnet Americas 3A, 800V, Standard Recovery Rectifier - Tape and Reel (Alt: 1N5407GHA0G) RoHS: Compliant Min Qty: 3000 Package Multiple: 500 Container: Reel 0
  • 3,000 $0.0927
  • 4,000 $0.0902
  • 7,000 $0.0889
  • 15,000 $0.0876
  • 30,000 $0.0850
$0.0850 / $0.0927 Buy Now
DISTI # 821-1N5407GHA0G
Mouser Electronics Rectifiers 3A, 800V, Standard Recovery Rectifier RoHS: Compliant 0
  • 1 $0.3700
  • 10 $0.2920
  • 100 $0.1750
  • 500 $0.1620
  • 1,000 $0.1100
  • 2,500 $0.1010
  • 10,000 $0.0870
  • 25,000 $0.0860
  • 50,000 $0.0810
$0.0810 / $0.3700 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 500 0
  • 3,000 $0.0991
$0.0991 Buy Now

Part Details for 1N5407GHA0G

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1N5407GHA0G Part Data Attributes:

1N5407GHA0G Taiwan Semiconductor
Buy Now Datasheet
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1N5407GHA0G Taiwan Semiconductor Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.10.00.80
Samacsys Manufacturer Taiwan Semiconductor
Additional Feature HIGH RELIABILITY, LOW POWER LOSS
Application EFFICIENCY
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V
JEDEC-95 Code DO-201AD
JESD-30 Code O-PALF-W2
JESD-609 Code e3
Non-rep Pk Forward Current-Max 125 A
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Output Current-Max 3 A
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Peak Reflow Temperature (Cel) 260
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 800 V
Reverse Current-Max 5 µA
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form WIRE
Terminal Position AXIAL
Time@Peak Reflow Temperature-Max (s) 10

Alternate Parts for 1N5407GHA0G

This table gives cross-reference parts and alternative options found for 1N5407GHA0G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1N5407GHA0G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
1N5407GR0 Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5407GHA0G vs 1N5407GR0
1N5407GA0G Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5407GHA0G vs 1N5407GA0G
1N5407GB0 Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5407GHA0G vs 1N5407GB0
1N5407GR0G Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5407GHA0G vs 1N5407GR0G
1N5407GHR0 Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5407GHA0G vs 1N5407GHR0
1N5407GHA0 Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5407GHA0G vs 1N5407GHA0
1N5407G-KB0G Rectifier Diode, Taiwan Semiconductor 1N5407GHA0G vs 1N5407G-KB0G
1N5407GHB0G Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5407GHA0G vs 1N5407GHB0G
1N5407G-KR0G Rectifier Diode, Taiwan Semiconductor 1N5407GHA0G vs 1N5407G-KR0G
1N5407GX0G Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5407GHA0G vs 1N5407GX0G
Part Number Description Manufacturer Compare
PR3006G-T Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2 Diodes Incorporated 1N5407GHA0G vs PR3006G-T
HER307GHR0G Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor 1N5407GHA0G vs HER307GHR0G
HER307G-KB0G Rectifier Diode, Taiwan Semiconductor 1N5407GHA0G vs HER307G-KB0G
GP30K-E3/73 DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode Vishay Semiconductors 1N5407GHA0G vs GP30K-E3/73
GP30K-E3/4F DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode Vishay Semiconductors 1N5407GHA0G vs GP30K-E3/4F
GP30K/74 Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2 Vishay Semiconductors 1N5407GHA0G vs GP30K/74
1N5407G-H Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Formosa Microsemi Co Ltd 1N5407GHA0G vs 1N5407G-H
1N5407G Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-27, Rugao Dachang Electronics Co Ltd 1N5407GHA0G vs 1N5407G
RGP30KHE3/54 DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode Vishay Semiconductors 1N5407GHA0G vs RGP30KHE3/54
FR306GU23 Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Rectron Semiconductor 1N5407GHA0G vs FR306GU23

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