Datasheets
1N6106US by:

Trans Voltage Suppressor Diode, 500W, 7.6V V(RWM), Bidirectional, 1 Element, Silicon

Part Details for 1N6106US by Microchip Technology Inc

Overview of 1N6106US by Microchip Technology Inc

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Applications Automotive

Price & Stock for 1N6106US

Part # Distributor Description Stock Price Buy
DISTI # 36AJ1956
Newark Bi-Directional Tvs B-Body Sq. Melf Rohs Compliant: Yes |Microchip 1N6106US Min Qty: 100 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 100 $13.7400
  • 500 $13.2200
$13.2200 / $13.7400 Buy Now
DISTI # 1N6106US-ND
DigiKey TVS DIODE 7.6VWM 15.23VC SQ-MELF Min Qty: 100 Lead time: 21 Weeks Container: Bulk Temporarily Out of Stock
  • 100 $13.7400
$13.7400 Buy Now
DISTI # 1N6106US
Avnet Americas Diode TVS Single Bi-Dir 7.6V 500W 2-Pin E-MELF - Bulk (Alt: 1N6106US) RoHS: Not Compliant Min Qty: 100 Package Multiple: 1 Lead time: 21 Weeks, 0 Days Container: Bulk 0
  • 1 $14.8000
  • 100 $13.7400
  • 500 $13.2200
$13.2200 / $14.8000 Buy Now
DISTI # 494-1N6106US
Mouser Electronics ESD Suppressors / TVS Diodes Bi-Directional TVS RoHS: Not Compliant 0
  • 100 $13.7400
$13.7400 Order Now
DISTI # 1N6106US
Microchip Technology Inc Bi-Directional TVS _ B-Body Sq. Melf, Projected EOL: 2049-02-05 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 0

Alternates Available
  • 1 $14.8000
$14.8000 Buy Now
Onlinecomponents.com   RoHS: Compliant 0
  • 25 $27.4800
  • 50 $16.9100
  • 75 $13.3900
  • 100 $13.1200
$13.1200 / $27.4800 Buy Now
NAC TVS RoHS: Compliant Min Qty: 23 Package Multiple: 1 0
  • 1 $15.1000
  • 100 $13.9100
  • 500 $13.2100
  • 800 $12.8900
$12.8900 / $15.1000 Buy Now
Master Electronics   RoHS: Compliant 0
  • 25 $27.4800
  • 50 $16.9100
  • 75 $13.3900
  • 100 $13.1200
$13.1200 / $27.4800 Buy Now

Part Details for 1N6106US

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1N6106US Part Data Attributes

1N6106US Microchip Technology Inc
Buy Now Datasheet
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1N6106US Microchip Technology Inc Trans Voltage Suppressor Diode, 500W, 7.6V V(RWM), Bidirectional, 1 Element, Silicon
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description HERMETIC SEALED, GLASS, D-5B, E-MELF-2
Reach Compliance Code compliant
Factory Lead Time 21 Weeks
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Min 9.03 V
Breakdown Voltage-Nom 10 V
Case Connection ISOLATED
Clamping Voltage-Max 15 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LELF-R2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 500 W
Number of Elements 1
Number of Terminals 2
Package Body Material GLASS
Package Shape ROUND
Package Style LONG FORM
Polarity BIDIRECTIONAL
Power Dissipation-Max 2 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 7.6 V
Surface Mount YES
Technology AVALANCHE
Terminal Finish TIN LEAD
Terminal Form WRAP AROUND
Terminal Position END

Alternate Parts for 1N6106US

This table gives cross-reference parts and alternative options found for 1N6106US. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1N6106US, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
JAN1N6106US Trans Voltage Suppressor Diode, 500W, 7.6V V(RWM), Bidirectional, 1 Element, Silicon Sensitron Semiconductors 1N6106US vs JAN1N6106US
JANTXV1N6106US Trans Voltage Suppressor Diode, 500W, 7.6V V(RWM), Bidirectional, 1 Element, Silicon Microchip Technology Inc 1N6106US vs JANTXV1N6106US
JAN1N6106US Trans Voltage Suppressor Diode, 500W, 7.6V V(RWM), Bidirectional, 1 Element, Silicon, Bkc Semiconductors Inc 1N6106US vs JAN1N6106US
JANTXV1N6106US Trans Voltage Suppressor Diode, 500W, 7.6V V(RWM), Bidirectional, 1 Element, Silicon Sensitron Semiconductors 1N6106US vs JANTXV1N6106US
JANTX1N6106US Trans Voltage Suppressor Diode, 500W, 7.6V V(RWM), Bidirectional, 1 Element, Silicon Microchip Technology Inc 1N6106US vs JANTX1N6106US
JAN1N6106US Trans Voltage Suppressor Diode, 500W, 7.6V V(RWM), Bidirectional, 1 Element, Silicon Microchip Technology Inc 1N6106US vs JAN1N6106US
JANTXV1N6106US Trans Voltage Suppressor Diode, 500W, 7.6V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, SURFACE MOUNT PACKAGE-2 Micross Components 1N6106US vs JANTXV1N6106US
1N6106US Trans Voltage Suppressor Diode, 500W, 7.6V V(RWM), Bidirectional, 1 Element, Silicon, Bkc Semiconductors Inc 1N6106US vs 1N6106US
Part Number Description Manufacturer Compare
JANTXV1N6106US Trans Voltage Suppressor Diode, 500W, 7.6V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, SURFACE MOUNT PACKAGE-2 Micross Components 1N6106US vs JANTXV1N6106US
JANTX1N6106US Trans Voltage Suppressor Diode, 500W, 7.6V V(RWM), Bidirectional, 1 Element, Silicon Microchip Technology Inc 1N6106US vs JANTX1N6106US
1N6106US Trans Voltage Suppressor Diode, 500W, 7.6V V(RWM), Bidirectional, 1 Element, Silicon, Bkc Semiconductors Inc 1N6106US vs 1N6106US
JAN1N6106US Trans Voltage Suppressor Diode, 500W, 7.6V V(RWM), Bidirectional, 1 Element, Silicon Sensitron Semiconductors 1N6106US vs JAN1N6106US
JANTX1N6106US Trans Voltage Suppressor Diode, 500W, 7.6V V(RWM), Bidirectional, 1 Element, Silicon Sensitron Semiconductors 1N6106US vs JANTX1N6106US
JAN1N6106US Trans Voltage Suppressor Diode, 500W, 7.6V V(RWM), Bidirectional, 1 Element, Silicon Microchip Technology Inc 1N6106US vs JAN1N6106US
JAN1N6106US Trans Voltage Suppressor Diode, 500W, 7.6V V(RWM), Bidirectional, 1 Element, Silicon, Bkc Semiconductors Inc 1N6106US vs JAN1N6106US
JANTXV1N6106US Trans Voltage Suppressor Diode, 500W, 7.6V V(RWM), Bidirectional, 1 Element, Silicon Microchip Technology Inc 1N6106US vs JANTXV1N6106US

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