Part Details for 1N6109US by Microchip Technology Inc
Overview of 1N6109US by Microchip Technology Inc
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for 1N6109US
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
1N6109US-ND
|
DigiKey | TVS DIODE 9.9VWM 19.11VC SQ-MELF Min Qty: 100 Lead time: 21 Weeks Container: Bulk | Temporarily Out of Stock |
|
$13.7400 | Buy Now |
|
DISTI #
1N6109US
|
Avnet Americas | Diode TVS Single Bi-Dir 9.9V 500W 2-Pin E-MELF - Bulk (Alt: 1N6109US) RoHS: Not Compliant Min Qty: 100 Package Multiple: 1 Lead time: 21 Weeks, 0 Days Container: Bulk | 0 |
|
$13.2200 / $14.8000 | Buy Now |
|
DISTI #
494-1N6109US
|
Mouser Electronics | ESD Suppressors / TVS Diodes Bi-Directional TVS RoHS: Not Compliant | 0 |
|
$13.7400 | Order Now |
|
DISTI #
1N6109US
|
Microchip Technology Inc | Bi-Directional TVS _ B-Body Sq. Melf, Projected EOL: 2048-10-03 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 |
0 Alternates Available |
|
$14.8000 | Buy Now |
|
|
Onlinecomponents.com | 0 |
|
$13.1200 / $27.4800 | Buy Now | |
|
DISTI #
1N6109US
|
Avnet Americas | Diode TVS Single Bi-Dir 9.9V 500W 2-Pin E-MELF - Bulk (Alt: 1N6109US) RoHS: Not Compliant Min Qty: 100 Package Multiple: 1 Lead time: 21 Weeks, 0 Days Container: Bulk | 0 |
|
$13.2200 / $14.8000 | Buy Now |
|
DISTI #
1N6109US
|
Avnet Americas | Diode TVS Single Bi-Dir 9.9V 500W 2-Pin E-MELF - Bulk (Alt: 1N6109US) RoHS: Not Compliant Min Qty: 100 Package Multiple: 1 Lead time: 21 Weeks, 0 Days Container: Bulk | 0 |
|
$13.2200 / $14.8000 | Buy Now |
|
|
NAC | TVS RoHS: Compliant Min Qty: 23 Package Multiple: 1 | 0 |
|
$12.8900 / $15.1000 | Buy Now |
|
|
Master Electronics | 0 |
|
$13.1200 / $27.4800 | Buy Now |
Part Details for 1N6109US
1N6109US CAD Models
1N6109US Part Data Attributes
|
|
1N6109US
Microchip Technology Inc
Buy Now
Datasheet
|
Compare Parts:
1N6109US
Microchip Technology Inc
Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Bidirectional, 1 Element, Silicon
|
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Package Description | HERMETIC SEALED, GLASS, D-5B, E-MELF-2 | |
| Reach Compliance Code | compliant | |
| Factory Lead Time | 21 Weeks | |
| Samacsys Manufacturer | Microchip | |
| Additional Feature | HIGH RELIABILITY | |
| Breakdown Voltage-Min | 11.73 V | |
| Breakdown Voltage-Nom | 13 V | |
| Case Connection | ISOLATED | |
| Clamping Voltage-Max | 19 V | |
| Configuration | SINGLE | |
| Diode Element Material | SILICON | |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE | |
| JESD-30 Code | O-LELF-R2 | |
| JESD-609 Code | e0 | |
| Non-rep Peak Rev Power Dis-Max | 500 W | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Package Body Material | GLASS | |
| Package Shape | ROUND | |
| Package Style | LONG FORM | |
| Polarity | BIDIRECTIONAL | |
| Power Dissipation-Max | 2 W | |
| Qualification Status | Not Qualified | |
| Rep Pk Reverse Voltage-Max | 9.9 V | |
| Surface Mount | YES | |
| Technology | AVALANCHE | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | WRAP AROUND | |
| Terminal Position | END |
Alternate Parts for 1N6109US
This table gives cross-reference parts and alternative options found for 1N6109US. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1N6109US, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| JANTXV1N6109US | Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Bidirectional, 1 Element, Silicon | Sensitron Semiconductors | 1N6109US vs JANTXV1N6109US |
| JAN1N6109US | Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Bidirectional, 1 Element, Silicon, | Bkc Semiconductors Inc | 1N6109US vs JAN1N6109US |
| JANS1N6109US | Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Bidirectional, 1 Element, Silicon | Microchip Technology Inc | 1N6109US vs JANS1N6109US |
| JANTX1N6109US | Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Bidirectional, 1 Element, Silicon | Microchip Technology Inc | 1N6109US vs JANTX1N6109US |
| JANTXV1N6109US | Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, SURFACE MOUNT PACKAGE-2 | Micross Components | 1N6109US vs JANTXV1N6109US |
| JAN1N6109US | Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, SURFACE MOUNT PACKAGE-2 | Micross Components | 1N6109US vs JAN1N6109US |
| JANTX1N6109US | Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, SURFACE MOUNT PACKAGE-2 | Micross Components | 1N6109US vs JANTX1N6109US |
| 1N6109US | Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, GLASS, MELF-2 | Sensitron Semiconductors | 1N6109US vs 1N6109US |