Datasheets
2MBI200VA-060-50 by:

Insulated Gate Bipolar Transistor

Part Details for 2MBI200VA-060-50 by Fuji Electric Co Ltd

Overview of 2MBI200VA-060-50 by Fuji Electric Co Ltd

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Applications Industrial Automation Energy and Power Systems Renewable Energy Electronic Manufacturing

Price & Stock for 2MBI200VA-060-50

Part # Distributor Description Stock Price Buy
DISTI # 2807471
element14 Asia-Pacific   RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $60.2378
  • 5 $59.0342
  • 10 $58.1242
$58.1242 / $60.2378 Buy Now
DISTI # 2807471
Farnell   RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $60.1652
  • 5 $49.8526
  • 10 $48.7040
$48.7040 / $60.1652 Buy Now
MacroQuest Electronics   54
RFQ

Part Details for 2MBI200VA-060-50

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2MBI200VA-060-50 Part Data Attributes

2MBI200VA-060-50 Fuji Electric Co Ltd
Buy Now Datasheet
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2MBI200VA-060-50 Fuji Electric Co Ltd Insulated Gate Bipolar Transistor
Part Life Cycle Code Active
Ihs Manufacturer FUJI ELECTRIC CO LTD
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer FUJI ELECTRIC
Case Connection ISOLATED
Collector Current-Max (IC) 200 A
Collector-Emitter Voltage-Max 600 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 7.2 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 600 ns
Turn-on Time-Nom (ton) 650 ns
VCEsat-Max 2.25 V

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