Part Details for 2N5431 by Central Semiconductor Corp
Overview of 2N5431 by Central Semiconductor Corp
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Price & Stock for 2N5431
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2N5431
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Avnet Americas | Uni-Junction Transistor 8.5kΩ 0.4µA TO-18 Case Box - Boxed Product (Development Kits) (Alt: 2N5431) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Box | 0 |
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RFQ | |
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Bristol Electronics | 35 |
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RFQ | ||
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DISTI #
2N5431
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Avnet Americas | Uni-Junction Transistor 8.5kΩ 0.4µA TO-18 Case Box - Boxed Product (Development Kits) (Alt: 2N5431) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Box | 0 |
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RFQ | |
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DISTI #
SMC-2N5431
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Sensible Micro Corporation | Through-Hole Ujt RoHS: Not Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Date Code: 8709 Container: Bulk | 4 |
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RFQ |
Part Details for 2N5431
2N5431 CAD Models
2N5431 Part Data Attributes:
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2N5431
Central Semiconductor Corp
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Datasheet
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2N5431
Central Semiconductor Corp
Unijunction Transistor, 0.4uA I(P), TO-18, TO-18, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | CENTRAL SEMICONDUCTOR CORP | |
| Package Description | TO-18, 3 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| Emitter Current-Max | 50 mA | |
| Inter-base Voltage-Max | 35 V | |
| Intrinsic Stand-off Ratio-Max | 0.8 | |
| Intrinsic Stand-off Ratio-Min | 0.72 | |
| JEDEC-95 Code | TO-18 | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 125 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Peak Point Current-Max | ||
| Power Dissipation-Max (Abs) | 0.36 W | |
| Static Inter-base Res-Max | 8.5 kΩ | |
| Static Inter-base Res-Min | 6 kΩ | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Element Material | SILICON | |
| Valley Point Current-Min | 2 mA |