Part Details for 2N7369 by New England Semiconductor
Overview of 2N7369 by New England Semiconductor
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Applications
Consumer Electronics
Audio and Video Systems
Part Details for 2N7369
2N7369 CAD Models
2N7369 Part Data Attributes
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2N7369
New England Semiconductor
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Datasheet
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2N7369
New England Semiconductor
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-254AA, Metal, 3 Pin, TO-254, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NEW ENGLAND SEMICONDUCTOR | |
Package Description | TO-254, 3 PIN | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Collector Current-Max (IC) | 10 A | |
Collector-Emitter Voltage-Max | 80 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 30 | |
JEDEC-95 Code | TO-254AA | |
JESD-30 Code | S-MSFM-P3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Package Body Material | METAL | |
Package Shape | SQUARE | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | PNP | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | PIN/PEG | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON | |
VCEsat-Max | 1 V |