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Trans JFET N-CH 3mA 3-Pin S-Mini T/R
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
10AK1279
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Newark | Jfet, N-Ch, 1.5V, 0.014A, To-236, Gate Source Breakdown Voltage Max:50V, Zero Gate Voltage Drain Current Max:14Ma, Gate Source Cutoff Voltage Max:1.5V, No. Of Pins:3 Pin, Operating Temperature Max:125°C, Channel Type:N Channel Rohs Compliant: Yes |Toshiba 2SK209-Y(TE85L, F) Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 4048 |
|
$0.1830 / $0.4680 | Buy Now |
DISTI #
2SK209-Y(TE85LF)CT-ND
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DigiKey | JFET N-CH 50V 14MA SC59 Min Qty: 1 Lead time: 40 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
23885 In Stock |
|
$0.1288 / $0.4400 | Buy Now |
DISTI #
757-2SK209YTE85LF
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Mouser Electronics | JFET N-Ch Junction FET 10mA -50V VGDS RoHS: Compliant | 5682 |
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$0.1280 / $0.4400 | Buy Now |
DISTI #
2SK209-Y(TE85L,F)
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EBV Elektronik | Trans JFET N-CH 3mA 3-Pin S-Mini T/R (Alt: 2SK209-Y(TE85L,F)) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 27 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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2SK209-Y(TE85L,F)
Toshiba America Electronic Components
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Datasheet
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2SK209-Y(TE85L,F)
Toshiba America Electronic Components
Trans JFET N-CH 3mA 3-Pin S-Mini T/R
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.95 | |
Samacsys Manufacturer | Toshiba | |
Additional Feature | LOW NOISE | |
Configuration | SINGLE | |
FET Technology | JUNCTION | |
Feedback Cap-Max (Crss) | 3 pF | |
JEDEC-95 Code | TO-236 | |
JESD-30 Code | R-PDSO-G3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 125 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 0.15 W | |
Power Dissipation-Max (Abs) | 0.15 W | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |